FQA13N50CF datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

Description
* 15 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A
* Low Gate Charge (Typ. 43 nC)
* Low Crss (Typ. 20 pF)
* 100% Avalanche Test.

Description

* 15 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A
* Low Gate Charge (Typ. 43 nC)
* Low Crss (Typ. 20 pF)
* 100% Avalanche Tested
* Fast Recovery Body Diode (Typ. 100 ns) This N-Channel enhancement mode power MOSFET.

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